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AS5134
Datasheet - E l e c t r i c a l C h a r a c t e r i s t i c s
6 Electrical Characteristics
T AMB = -40 to 140oC, VDD5V = 4.5-5.5V, all voltages referenced to V SS , unless otherwise noted.
Table 3. Electrical Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Units
V DD
I DD
Positive Supply Voltage
Operating Current
No load on outputs. Supply current can be
reduced by using stronger magnets.
4.5
+5.5
22
V
mA
I off
Power down current
Low Power Mode
70
120
μA
System Parameters
N
Resolution
8.5
1
Bit
Deg
T PwrUp
t s
Power Up Time
Tracking rate
Startup from zero
Startup from Low Power mode
Step rate of tracking ADC;
1 step = 1o
? 4100
? 500
5.2
μs
μs/step
INL cm
INL dm
t delay
TN
Accuracy
Propagation delay
Transition noise
Centered Magnet
Within horizontal displacement radius
Internal signal processing time
Peak-Peak
-2
-3
2
3
22
1.41
Deg
Deg
μs
Deg
Magnet Specifications
B i
V i
Magnetic Input Range
Magnet rotation speed
Required vertical component of the
magnetic field strength on the chip
surface, measured along a concentric
circle with a radius of 1 mm
to maintain locked state
20
80
76875
mT
rpm
PWM Output
t PWM
PWM period
600
750
900
μs
f PWM
PWM frequency
1 / PWM period
1.11
1.33
1.66
kHz
Programming Parameters
V PROG
Tamb PROG
t PROG
V R,prog
V R,unprog
Programming Voltage
Programming ambient temperature
Programming time
Analog readback voltage
Static voltage at pin Prog
During programming
Timing is internally generated
During analog readback mode at pin Prog
8.0
0
2
2
8.5
85
4
0.5
3.5
V
oC
μs
V
Hall Element Sensitivity Options
sens = 00 (default)
1.60
1.65
1.75
sens
Hall Element sensitivity setting
sens = 01
sens = 10
1.79
2.01
1.88
2.11
1.98
2.22
X
sens = 11
2.23
2.35
2.47
DC Characteristics of Digital Inputs and Outputs
CMOS Inputs: DDCLK, CS, DIO, C2
V IH
V IL
I LEAK
High level input voltage
Low level input voltage
Input leakage current
0.7*V DD
0
V DD
0.3*V DD
1
V
V
μA
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